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ERJ-3GEYJ471 参数 Datasheet PDF下载

ERJ-3GEYJ471图片预览
型号: ERJ-3GEYJ471
PDF下载: 下载PDF文件 查看货源
内容描述: 50MHz至1000MHz , 15W的GaN WIDEBAND [50MHz TO 1000MHz, 15W GaN WIDEBAND]
分类和应用:
文件页数/大小: 11 页 / 906 K
品牌: RFMD [ RF MICRO DEVICES ]
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RFHA1000  
Absolute Maximum Ratings  
Parameter  
Rating  
150  
Unit  
V
Caution! ESD sensitive device.  
Exceeding any one or a combination of the Absolute Maximum Rating conditions may  
cause permanent damage to the device. Extended application of Absolute Maximum  
Rating conditions to the device may reduce device reliability. Specified typical perfor-  
mance or functional operation of the device under Absolute Maximum Rating condi-  
tions is not implied.  
Drain Voltage (V )  
D
Gate Voltage (V )  
-8 to +2  
10  
V
G
Gate Current (I )  
mA  
G
The information in this publication is believed to be accurate and reliable. However, no  
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any  
infringement of patents, or other rights of third parties, resulting from its use. No  
license is granted by implication or otherwise under any patent or patent rights of  
RFMD. RFMD reserves the right to change component circuitry, recommended appli-  
cation circuitry and specifications at any time without prior notice.  
Operational Voltage  
RF- Input Power  
32  
31  
V
dBm  
Ruggedness (VSWR)  
Storage Temperature Range  
12:1  
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive  
2002/95/EC.  
-55 to +125  
-40 to +85  
°C  
°C  
Operating Temperature Range (T )  
L
Operating Junction Temperature (T )  
200  
°C  
J
Human Body Model  
Class 1C  
6
MTTF (T < 200°C, 95% Confidence Limits)*  
Hours  
°C/W  
J
3 x 10  
Thermal Resistance, R (junction to case)  
6
TH  
measured at T = 85°C, DC bias only  
C
* MTTF - median time to failure for wear-out failure mode (30% I  
Refer to product qualification report for FIT(random) failure rate.  
degradation) which is determined by the technology process reliability.  
DSS  
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage  
and current must not exceed the maximum operating values specified in the table on page two.  
Bias Conditions should also satisfy the following expression: P  
< (T - T )/R J - C and T = T  
DISS  
J C TH C CASE  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
Max.  
Recommended Operating  
Conditions  
Drain Voltage (V  
)
28  
-3  
32  
-2  
V
V
DSQ  
Gate Voltage (V  
)
-5  
GSQ  
Drain Bias Current  
88  
mA  
RF Input Power (P  
)
30  
dBm  
IN  
Input Source VSWR  
10:1  
RF Performance  
Characteristics  
Frequency Range  
Linear Gain  
50  
1000  
-10  
MHz  
dB  
Small signal 3dB bandwidth  
P = 30dBm, 100MHz  
OUT  
17.5  
Power Gain  
14.5  
3
dB  
dB  
P3DB, 100MHz  
= 30dBm, 50MHz to 1000MHz  
Gain Flatness  
P
OUT  
Gain Variation with Temperature  
Input Return Loss (S  
-0.02  
dB/°C  
dB  
)
11  
Output Power (P  
)
41.5  
60  
dBm  
%
50MHz to 1000MHz  
50MHz to 1000MHz  
3dB  
Power Added Efficiency (PAE)  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.  
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