RF3928
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
Unit
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Source Voltage
150
-8 to +2
155
V
V
Gate Source Voltage
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Gate Current (I )
mA
V
G
Operational Voltage
50
Ruggedness (VSWR)
3:1
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Storage Temperature Range
-55 to +125
-40 to +85
°C
°C
Operating Temperature Range
(T )
L
Operating Junction Temperature
250
°C
(T )
J
Human Body Model
Class 1A
Hours
MTTF (T < 200°C)
3.0E + 06
1.4E + 05
J
MTTF (T < 250°C)
J
Thermal Resistance, Rth
(junction to case)
T = 85°C, DC bias only
0.90
0.18
°C/W
C
T = 85°C, 100s pulse, 10% duty
C
cycle
0.25
T = 85°C, 500s pulse, 10% duty
C
cycle
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: P
< (T – T )/R J - C and T = T
DISS
J C TH C CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating
Condition
Drain Voltage (V
)
50
-2
V
V
DSQ
Gate Voltage (V
)
-8
-3
GSQ
Drain Bias Current
440
mA
Frequency of Operation
2800
3400
MHz
DC Functional Test
I
– Gate Leakage
2
2
mA
mA
V
V
V
V
V
= -8V, V = 0V
D
G (OFF)
D (OFF)
G
G
D
G
I
– Drain Leakage
= -8V, V = 50V
D
V
V
(th) – Threshold Voltage
-3.4
= 50V, I = 20mA
D
GS (TH)
– Drain Voltage at high current
0.22
V
= 0V, I = 1.5A
D
DS
[1,2]
RF Functional Test
Small Signal Gain
Power Gain
13.6
10.5
dB
dB
dB
F = 2800MHz, Pin =30dBm
F = 2800MHz, Pin = 44dBm
F = 2800MHz, Pin = 30dBm
10
Input Return Loss
-5.5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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DS120508
RFMD [ RF MICRO DEVICES ]
