RF3928B
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
Unit
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Source Voltage
150
-8 to +2
155
V
mA
V
Gate Source Voltage
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Gate Current (I )
G
Operational Voltage
65
Ruggedness (VSWR)
3:1
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
°C
°C
°C
Storage Temperature Range
-55 to +125
-40 to +85
250
Operating Temperature Range (T )
L
Operating Junction Temperature (T )
J
Human Body Model
Class 1A
Hours
°C/W
MTTF (T < 200°C)
3.0E + 06
1.4E + 05
J
MTTF (T < 250°C)
J
Thermal Resistance, Rth (junction to case)
T =85°C, DC bias only
0.90
0.18
0.25
C
T =85°C, 100s pulse, 10% duty cycle
C
T =85°C, 300s pulse, 10% duty cycle
C
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: P
<(T –T )/R J-C and T =T
DISS
J C TH C CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating
Condition
Drain Voltage (V
)
65
-3
V
V
DSQ
Gate Voltage (V
)
-8
-2
GSQ
Drain Bias Current
440
mA
Frequency of Operation
2800
3400
MHz
DC Functional Test
I
– Gate Leakage
2
2
mA
mA
V
V =-8V, V =0V
G D
G (OFF)
D (OFF)
I
– Drain Leakage
V =-8V, V =65V
G D
V
V
(th) – Threshold Voltage
(on) – Drain Voltage at high
-3.5
V =65V, I =40mA
D D
GS
0.22
V
V =0V, I =1.5A
DS
G
D
current
[1, 2]
RF Functional Test
Small Signal Gain
Power Gain
13
dB
dB
dB
F=2900MHz, P =30dBm
IN
11.2
11.8
F=2900MHz, P =44dBm
IN
Input Return Loss
-6
F=2900MHz, P =30dBm
IN
Output Power
55.3
45
56
50
13
dBm
%
F=2900MHz, P =44dBm
IN
Drain Efficiency
Small Signal Gain
dB
F=3150MHz, P =30dBm
IN
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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