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ECJ-2VB1H104K 参数 Datasheet PDF下载

ECJ-2VB1H104K图片预览
型号: ECJ-2VB1H104K
PDF下载: 下载PDF文件 查看货源
内容描述: 280W氮化镓宽带脉冲功率放大器 [280W GaN Wideband Pulsed Power Amplifier]
分类和应用: 放大器脉冲功率放大器
文件页数/大小: 10 页 / 871 K
品牌: RFMD [ RF MICRO DEVICES ]
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RFHA1025
280W GaN
Wideband
Pulsed Power
Amplifier
RFHA1025
280W GaN Wideband Pulsed Power Amplifier
Package: Flanged Ceramic, 2-Pin
Features
Wideband Operation: 0.96GHz to
1.215GHz
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse
Conditions
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Integrated Matching
Components for High Terminal
Impedances
RF IN
VG
Pin 1 (CUT )
RF OUT
T
VD
Pin 2
G
GND
B
BASE
50V Operation Typical
Performance
Functional Block Diagram
Output Pulsed Power 280W
Pulse Width 100S,
Duty Cycle 10%
Small Signal Gain 17dB
High Efficiency 55%
-40°C to 85°C Operating
Temperature
Product Description
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density gallium nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
Ordering Information
RFHA1025S2
RFHA1025SB
RFHA1025SQ
RFHA1025SR
RFHA1025TR13
RFHA1025PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 0.96GHz to .215GHz;50V
Optimum Technology Matching
®
Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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