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CGA3318ZSQ 参数 Datasheet PDF下载

CGA3318ZSQ图片预览
型号: CGA3318ZSQ
PDF下载: 下载PDF文件 查看货源
内容描述: 双CATV宽带高线性度的SiGe HBT放大器 [DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER]
分类和应用: 放大器有线电视射频微波
文件页数/大小: 10 页 / 291 K
品牌: RFMD [ RF MICRO DEVICES ]
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CGA-3318Z  
Pin  
1
Function  
RF IN  
Description  
Device 1. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic.  
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as  
possible.  
2, 3  
GND  
Device 2. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic.  
4
5
RF IN  
RF OUT/VCC  
Device 2. RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF  
choke inductor. Because DC biasing is present on this pin, a DC-blocking capacitor should be used in most appli-  
cations. The supply side of the bias network should be well bypassed.  
Same as pins 2 and 3.  
6, 7  
8
EPAD  
GND  
RF OUT/VCC  
GND  
Device 1. Same as pin 5.  
Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum  
thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended  
land pattern.  
Device Pin Out  
1
2
3
4
8
7
6
5
Suggested Pad Layout  
PCB Pad Layout  
Dimensions in inches [millimeters]  
Sized for 31 mil thick FR-4  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS091119  
9 of 10  
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