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CGA1518ZSR 参数 Datasheet PDF下载

CGA1518ZSR图片预览
型号: CGA1518ZSR
PDF下载: 下载PDF文件 查看货源
内容描述: PUSH - PULL 50MHz至1000MHz高线性度的InGaP HBT放大器 [PUSH-PULL 50MHz to 1000MHz HIGH LINEARITY InGaP HBT AMPLIFIER]
分类和应用: 放大器射频微波
文件页数/大小: 8 页 / 480 K
品牌: RFMD [ RF MICRO DEVICES ]
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CGA-1518Z
Push-Pull
50MHz to
1000MHz
High Linearity
InGaP HBT
Amplifier
CGA-1518Z
PUSH-PULL 50MHz to 1000MHz HIGH
LINEARITY InGaP HBT AMPLIFIER
Package: SOIC-8
Product Description
RFMD’s CGA-1518Z is a high performance InGaP HBT MMIC Amplifier. Designed
with InGaP process technology for excellent reliability. A Darlington configuration is
utilized for broadband performance. The heterojunction increases breakdown volt-
age and minimizes leakage current between junctions. The CGA-1518Z contains
two amplifiers for use in wideband push-pull CATV amplifiers requiring excellent
second order performance. The second and third order non-linearities are greatly
improved in the push-pull configuration.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
5V Single Supply
Excellent Linearity Perfor-
mance at +34dBmV Output
Power Per Tone
Two Amplifiers in Each SOIC-8
Package Simplify Push-Pull
Configuration PC Board Lay-
out
Available in Lead-Free, RoHS
Compliant, and Green Pack-
aging
SOIC-8 Package
Amplifier Configuration
1
2
3
4
8
7
6
5
Applications
CATV Head End Driver and
Predriver Amplifier
CATV Line Driver Amplifier
Parameter
Small Signal Gain
Gain Flatness
Output IP3
Min.
14.9
Specification
Typ.
15.5
±0.6
37
Max.
Unit
dB
dB
dBm
Condition
50MHz to 1000MHz
50Hz to 1000MHz
500MHz
Tone Spacing=1MHz
P
OUT
per Tone=+6dBm
500MHz
500MHz
500MHz
50MHz to 1000MHz
79 Ch., Flat Tilt, +34dBmV
79 Ch., Flat Tilt, +34dBmV
79 Ch., Flat Tilt, +34dBmV
5V V
CC
Junction to case slug
Output Power at 1dB Gain Compres-
20
dBm
sion
Input Return Loss
20
dB
Output Return Loss
20
dB
Noise Figure
4.5
dB
Balun Insertion Loss Included
CSO
77
dBc
CTB
70
dBc
XMOD
61
dBc
Device Operating Voltage
5.0
V
Device Operating Current
150
mA
Thermal Resistance
30
°C/W
(Junction to Lead)
Test Conditions: V
CC
=5V, I
D
=150mA Typ., T
L
=25°C, Z
S
=Z
L
=75Ω, Push Pull Application Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Prelim DS091110
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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