RFHA1025
Absolute Maximum Ratings
Parameter
Rating
150
Unit
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Voltage (V )
D
Gate Voltage (V )
-8 to 2
155
V
G
Gate Current (I )
mA
G
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
-40 to +85
°C
°C
Operating Temperature Range (T )
C
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Operating Junction Temperature (T )
250
°C
J
Human Body Model
Class 1B
MTTF (T < 200°C, 95% Confidence Limits)*
1.8E + 07
Hours
Hours
°C/W
J
MTTF (T < 250°C, 95% Confidence Limits)*
1.1E + 05
J
Thermal Resistance, R (junction to case):
TH
0.90
0.18
0.34
T = 85°C, DC bias only
C
T = 85°C, 100s pulse, 10% duty cycle
C
T = 85°C, 1ms pulse, 10% duty cycle
C
* MTTF - median time to failure for wear-out failure mode (30% I
degradation) which is determined by the technology process reliability.
DSS
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: P
< (T - T )/R J - C and T = T
DISS
J C TH C CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating Conditions
Drain Voltage (V
)
50
-3
V
V
DSQ
Gate Voltage (V
)
-8
-2
GSQ
Drain Bias Current
440
mA
Frequency of Operation
960
1215
MHz
DC Functional Test
I
– Gate Leakage
– Drain Leakage
– Threshold Voltage
2
mA
mA
V
V
= -8V, V = 0V
G (OFF)
D (OFF)
G
G
D
G
D
I
2.5
V
V
V
= -8V, V = 50V
D
V
V
-3.5
= 50V, I = 40mA
D
GS (TH)
– Drain Voltage at High
0.28
V
= 0V, I = 1.5A
D
DS (ON)
Current
[1], [2]
f = 960MHz, P = 28dBm
RF Functional Test
Small Signal Gain
Power Gain
17
14.2
-7.5
55.2
55
dB
dB
IN
13
f = 960MHz, P = 41dBm
IN
Input Return Loss
Output Power
-5
-5
dB
54
50
dBm
%
Drain Efficiency
Small Signal Gain
Power Gain
17
dB
f = 1215MHz, P = 28dBm
IN
13
13.6
-7
dB
f = 1215MHz, P = 41dBm
IN
Input Return Loss
Output Power
dB
54
50
54.6
59
dBm
%
Drain Efficiency
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
2 of 10
DS120928
RFMD [ RF MICRO DEVICES ]
