RF3932
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
150
Unit
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Voltage (V )
D
Gate Voltage (V )
-8 to +2
39
V
G
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Gate Current (I )
mA
V
G
Operational Voltage
65
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
-40 to +85
°C
°C
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Operating Temperature Range (T )
C
Operating Junction Temperature (T )
200
°C
J
Human Body Model
Class 1A
6
MTTF (T < 200°C, 95% Confidence Limits)*
Hours
°C/W
J
3 x 10
Thermal Resistances, R (junction to case)
2.6
TH
measured at T = 85°C, DC bias only
C
*MTTF - median time to failure for wear-out failure mode (30% I
DSS
degradation) which is determined by the technology process reliability. Refer
to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table
below.
Bias Conditions should also satisfy the following expression:
P
< (T - T ) / R J-C and T = T
DISS
J C TH C CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating
Conditions
Drain Voltage (V
)
28
48
V
V
DSQ
Gate Voltage (V
)
-4.5
-3.7
220
-2.5
GSQ
Drain Bias Current
mA
Frequency of Operation
DC
3500
MHz
Capacitance
C
5
pF
pF
pF
V
V
V
= -8V, V = OV
RSS
G
G
G
D
C
23
= -8V, V = OV
ISS
D
C
16.5
= -8V, V = OV
OSS
D
DC Functional Test
2
mA
mA
V
I
(off) - Gate Leakage
(off) - Drain Leakage
(th) - Threshold Voltage
V
V
V
V
= -8V, V = OV
G
D
G
G
D
G
D
2.5
I
= -8V, V = 48V
D
-4.2
V
V
= 48V, I = 10mA
GS
DS
D
0.25
V
(on) - Drain Voltage at high current
= OV, I = 1.5A
D
[1], [2]
= 48V, I = 220mA
RF Functional Test
-3.4
13
V
V
V
GSQ
D
D
Gain
11
55
dB
%
CW, POUT = 47.8dBm, f = 2140MHz
60
CW, P
= 47.8dBm, f = 2140MHz
= 47.8dBm, f = 2140MHz
Drain Efficiency
Input Return Loss
OUT
OUT
-12
dB
CW, P
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