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AP1110 参数 Datasheet PDF下载

AP1110图片预览
型号: AP1110
PDF下载: 下载PDF文件 查看货源
内容描述: [AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT (Bluetooth) Class1 applications. The main features of AP1110 involve 2x2 compact profile; signal gain at 26 dB; typical power of 23dBm and PAE of 40% for BT Class1 under 3.3V. It is housed in a 2 x 2 (mm), 8-pin, and DFN leadless package. ]
分类和应用: ISM频段
文件页数/大小: 10 页 / 112 K
品牌: RFMD [ RF MICRO DEVICES ]
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AP1110
is a linear, low current power amplifier
in ISM band utilizing InGaP /GaAs HBT
process. The AP1110 is well suitable to be
used for portable, low current 2.4GHz WLAN
applications as well as for BT (Bluetooth)
Class1 applications.
AP1110 is packaged in
2x2
compact profile.
For WLAN application, it features low current of
85mA
at linear power of
18.5dBm,
gain of
26dB under 3.3V. For Bluetooth applications, it
features of gain at 26 dB; typical power of
23dBm
and PAE of
40%
under 3.3V. AP1110
is also suitable for the new BT 2.0 (EDR)
standard.
Major Applications
• Bluetooth Class 1 including V1.1,1.2
& (2.0)EDR standard
• IEEE 802.11b/g WLAN system
• WLAN Portable Devices
• WLAN USB Devices
• Other 2.4 GHz ISM Band
Ultra Small Profile: 2x2(mm), DFN-8pin
WLAN Applications:
(Under Vc=3.3V, Vref=2.8V)
LOW Current: 85mA at 18.5dBm
High efficiency: PAE: 25% at 18dBm
Gain: 26 dB
BT Applications:
(BT V.1.1&1.2, Under Vc=3.3V, Vref=2.85V)
LOW Current: 85mA at 18dBm
60mA at 16dBm
50mA at 14dBm
High efficiency: PAE: 40% at 23dBm
Gain: 26 dB
Harmonic: -33dBc at 23dBm
(BT EDR version, under Vc&Vref=3.3V)
LOW Current: 110mA at 18dBm
95mA at 16dBm
75mA at 14dBm
Gain: 23dB
Note: The different applications are based
on different outside circuit, please refer to
the Application Note for more details.
Pin Details
Pin
Number
1
2
3
4
5
6
7
Name
Vcc
RF IN
Vcc_Bias
NC
V
REF1
V
REF2
RF OUT
RF OUT
Description
Supply voltage.
RF input.
Supply voltage for bias circuit.
No connection.
PA 1
st
stage bias control voltage.
PA 2
nd
stage bias control voltage.
RF output. Require external
matching.
The package ground provides
circuit ground as well as heat
dissipation path for the power
amplifier.
Functional Block Diagram
Vcc
1
2
3
4
8
7
6
5
RF OUT
RF IN
RF OUT
AP1110
Vcc_Bias
V
REF2
NC
V
REF1
8
DFN - 8 pin, 2 x 2 (mm)
Package
Base
Center Metal
For more information,please contact us at:
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
© 2006 RFIC Technology Corporation All rights reserved.
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
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