Preliminary
XVT9003-1
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Voltage Controlled Temperature Compensated Crystal Oscillator
Excellent Frequency Stability & Low Phase Noise
3.2 x 2.5 x 1.2 mm Surface-mount Case
Complies with Directive 2002/95/EC (RoHS)
Pb
19.200000 MHz
VCTCXO
SM3225-4 Case
Electrical Characteristics
Characteristic
Nominal Frequency
Component Storage Temperature Range
Storage Temperature Range in Tape and Reel
Soldering Profile, 10 seconds, up to 5 cycles
Operating Temperature Range
Power Supply Voltage
Output Voltage with Load 10 pF||10 KΩ
Output Waveform
Power Supply Current
Control Voltage
Control Voltage Input Impedance
Frequency Tolerance, Single Solder Reflow, Vcontrol = 1.50 V
Frequency Stability versus:
Temperature, -40 to 85 °C
Supply Voltage, 3.14 to 3.46 V
Load 10 pF||10 KΩ ±10%
Control Voltage Frequency Range (1.5 ±1.0 V)
Start Up Time, 90% of final RF level in V
P-P
Aging @ 25 °C
Harmonics
SSB Phase Noise @ 1 kHz Carrier Offset
Stanard Shipping Quantity on 180 mm (7”) Reel
Lid Symbolization
1000
9003-1/YWWS
±1
-5.0
-130
±8
2.0
±1.0
±0.2
±0.2
ppm
ppm
ppm
ppm/V
ms
ppm/year
dBc
dBc/Hz
units
Icc
Vcon
100K
±2.0 ppm max @ 25 °C ±2 °C
1.5±1.0
Vcc
Vout
-40
3.14
0.8
clipped sinewave
2.0
mA
V
ohms
3.30
Sym
fo
Notes
Minimum
-55
-40
Typical
19.200000
Maximum
+125
+85
260
+85
3.46
Units
MHz
°C
°C
°C
°C
V
V
P-P
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
The design, manufacturing process, and specifications of this device are subject to change without notice.
www.RFM.com E-mail: info@rfm.com
©2009-2010 by RF Monolithics, Inc.
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XVT9003-1 3/15/10