Preliminary
XVT9002
•
•
•
•
Voltage Controlled Temperature Compensated Crystal Oscillator
Excellent Frequency Stability & Low Phase Noise
3.2 x 2.5 x 1.3 mm Surface-Mount Case
Complies with Directive 2002/95/EC (RoHS)
Pb
26 MHz
VCTCXO
SM3225-4 Case
Electrical Characteristics
Characteristic
Nominal Frequency
Storage Temperature
Operating Temperature Range
Power Supply Voltage
Output Voltage with Load 10 pF ||10 K
Output Waveform
Power Supply Current
Control Voltage
Control Voltage Input Impedance
Frequency Tolerance, Vcontrol = 1.2 V, after Reflow
Frequency Stability versus:
Temperature, -30 to 75 °C
Supply Voltage, 2.3 to 2.5 V
Load 10 pF||10 K±10%
Control Voltage Frequency Range, 1.2 ±1.0 V
Start Up Time, 90% of final RF level in V
P-P
Aging @ 25 °C
Harmonics
SSB Phase Noise @ 1 kHz Carrier Offset
Stanard Shipping Quantity on 180 mm (7”) Reel
Lid Symbolization
-130 dBc/Hz maximum
1000
9002 // YWWS
units
±1
-5.0
±9
±0.3
±0.2
±15
2.0
ppm
ppm
ppm
ms
ppm/year
dBc
Icc
Vcon
100K
±2.5 ppm max @ 25 °C ±3 °C
±2.5
ppm
1.2±1.0
Vcc
Vout
Sym
Fo
Notes
Minimum
-40
-30
2.3
0.8
Typical
26.000000
Maximum
+85
+75
Units
MHz
°C
°C
V
V
P-P
2.4
clipped sinewave
2.5
1.2
mA
V
ohms
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
The design, manufacturing process, and specifications of this device are subject to change without notice.
www.RFM.com E-mail: info@rfm.com
© 2009-2012 by RF Monolithics, Inc.
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XVT9002 - 2/21/12