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R1LV0416CSB-7LI 参数 Datasheet PDF下载

R1LV0416CSB-7LI图片预览
型号: R1LV0416CSB-7LI
PDF下载: 下载PDF文件 查看货源
内容描述: 宽温度范围版本4M SRAM ( 256千字× 16位) [Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 18 页 / 117 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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R1LV0416C-I Series
Wide Temperature Range Version
4M SRAM (256-kword
×
16-bit)
REJ03C0105-0200Z
Rev. 2.00
May.26.2004
Description
The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword
×
16-bit. R1LV0416C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II.
Features
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
Fast access time: 55/70 ns (max)
Power dissipation:
Active: 5.0 mW/MHz (typ)(V
CC
= 2.5 V)
: 6.0 mW/MHz (typ) (V
CC
= 3.0 V)
Standby: 1.25
µW
(typ) (V
CC
= 2.5 V)
: 1.5
µW
(typ) (V
CC
= 3.0 V)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range:
−40
to +85°C
Rev.2.00, May.26.2004, page 1 of 16