PS2533-1,PS2533L-1
TYPICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
400
150
Diode Power Dissipation P
D
(mW)
300
100
1.5 mW/°C
200
3.0 mW/°C
100
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
(°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
T
A
= +100°C
+75°C
+50°C
+25°C
0°C
–25°C
–55°C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
160
140
Collector Current I
C
(mA)
5.0
Forward Current I
F
(mA)
10
120
100
80
60
40
20
4.5 mA
mA
mA
4.0 mA
3.5
mA
3.0
1
mA
2.5
A
2.0 m
1.5 mA
1.0 mA
0.1
I
F
= 0.5 mA
1
2
3
4
5
6
7
8
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(A)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
500
10
μ
1
μ
100 n
10 n
1n
100 p
V
CE
= 350 V
Collector Current I
C
(mA)
100
50
10
5
1
0.5
0.1
0.0
mA
I
F
= 5.0
A
2.0 m
1.0 mA
0.5 mA
–50
–25
0
25
50
75
100
0.2
0.4
0.6
0.8
1.0
1.2
Ambient Temperature T
A
(°C)
Collector Saturation Voltage V
CE (sat)
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PN10233EJ03V0DS
7
RENESAS [ RENESAS TECHNOLOGY CORP ]
