PS2525-1,PS2525L-1
TYPICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
250
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
Diode Power Dissipation P
D
(mW)
200
100
150
2.5 mW/°C
100
1.5 mW/°C
50
50
0
25
50
75
100
125
0
25
50
75
100
125
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
(°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
150
100
T
A
= +100°C
+75°C
+50°C
100
50
0
–50
–100
0.01
0.4
–150
–1.5
FORWARD CURRENT vs.
FORWARD VOLTAGE
Forward Current I
F
(mA)
10
1
+25°C
0°C
–25°C
–55°C
0.1
0.6
0.8
1.0
1.2
1.4
1.6
Forward Current I
F
(mA)
–1.0
–0.5
0.0
0.5
1.0
1.5
Forward Voltage V
F
(V)
Forward Voltage V
F
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
10 000
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
50
I
F
= 50 mA
10
5
1
0.5
0.1
0.05
0.01
0.0
20 mA
10 mA
Collector Current I
C
(mA)
1 000
100
V
CE
= 80 V
40 V
24 V
10 V
5V
5 mA
2 mA
1 mA
10
1
0.1
–60 –40
–20
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(°C)
Collector Saturation Voltage V
CE (sat)
(V)
Remark
The graphs indicate nominal characteristics.
6
Data Sheet PN10231EJ04V0DS
RENESAS [ RENESAS TECHNOLOGY CORP ]
