PS2501-1,-4,PS2501L-1,-4
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= 25°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
150
Diode Power Dissipation P
D
(mW)
PS2501-1
PS2501L-1
100
PS2501-4
PS2501L-4
1.5 mW/°C
100
PS2501-4
PS2501L-4
PS2501-1
PS2501L-1
1.5 mW/°C
50
1.2 mW/°C
50
1.2 mW/°C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
(°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
50
Forward Current I
F
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
70
Collector Current I
C
(mA)
T
A
= +100°C
+60°C
+25°C
60
50
40
30
20
10
A
0m
A
5
m
A
20
m
10
10
5
0°C
–25°C
–50°C
1
0.5
I
F
= 5 mA
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
50 mA
20 mA
10 mA
10 000
Collector Current I
C
(mA)
1 000
V
CE
= 80 V
40 V
24 V
10 V
5V
10
5
5 mA
2 mA
100
1
0.5
I
F
= 1 mA
10
1
– 50
–25
0
25
50
75
100
0.1
0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(°C)
Collector Saturation Voltage V
CE (sat)
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PN10225EJ05V0DS
7
RENESAS [ RENESAS TECHNOLOGY CORP ]
