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HN58V65AP-10 参数 Datasheet PDF下载

HN58V65AP-10图片预览
型号: HN58V65AP-10
PDF下载: 下载PDF文件 查看货源
内容描述: 64K的EEPROM ( 8千字× 8位)就绪/忙功能, RES功能( HN58V66A ) [64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 28 页 / 257 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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HN58V65A Series
HN58V66A Series
64 k EEPROM (8-kword
×
8-bit)
Ready/Busy Function,
RES
Function (HN58V66A)
REJ03C0149-0300Z
(Previous ADE-203-539B (Z) Rev. 2.0)
Rev. 3.00
Dec. 04. 2003
Description
Renesas Technology
's
HN58V65A series and HN58V66A series are a electrically erasable and
programmable EEPROM’s organized as 8192-word
×
8-bit. They have realized high speed, low power
consumption and high relisbility by employing advanced MNOS memory technology and CMOS process
and circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
Single supply: 2.7 to 5.5 V
Access time:
100 ns (max) at 2.7 V
V
CC
< 4.5 V
70 ns (max) at 4.5 V
V
CC
5.5 V
Power dissipation:
Active: 20 mW/MHz (typ)
Standby: 110
µW
(max)
On-chip latches: address, data,
CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (64 bytes): 10 ms (max)
Ready/Busy
Data
polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
Rev.3.00, Dec. 04.2003, page 1 of 26