HAT2240C
Silicon N Channel MOS FET
Power Switching
REJ03G1241-0400
Rev.4.00
Apr 05, 2006
Features
•
Low on-resistance
R
DS(on)
= 75 mΩ typ.(at V
GS
= 4.5 V)
•
Low drive current
•
High density mounting
•
2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
6
G
2 3 4 5
DDD D
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
1
2
3
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Drain current
I
D
Note1
Drain peak current
I
D (pulse)
Body - drain diode reverse drain current
I
DR
Channel dissipation
Pch
Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
Ratings
60
±12
2.5
10
2.5
900
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
Rev.4.00 Apr 05, 2006 page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
