HAT2165H
Static Drain to Source on State Resistance
vs. Temperature
8
Pulse Test
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
1000
300
100
30
10
3
1
0.3
0.1
0.1
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
100
25°C
75°C
Tc = -25°C
6
I
D
= 10 A, 20 A
50 A
4
V
GS
= 4.5 V
2
10 A, 20 A, 50 A
10 V
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
100
0
5
10
15
20
V
GS
= 0
f = 1 MHz
25
30
Coss
Crss
Ciss
Body-Drain Diode Reverse
Recovery Time
100
Reverse Recovery Time trr (ns)
50
20
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
10
0.1
Reverse Drain Current
I
DR
(A)
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 55 A
V
DD
= 5 V
10 V
25 V
V
GS
12
Switching Characteristics
V
GS
(V)
16
1000
300
100
30
td(on)
10
tr
3
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7
Ω,
duty
≤
1 %
2
5 10 20
50 100
tf
td(off)
40
30
V
DD
= 25 V
20
10 V
5V
Drain to Source Voltage
8
V
DS
4
10
0
20
40
60
80
0
100
Gate to Source Voltage
Switching Time t (ns)
0.1 0.2 0.5 1
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.6.00 Sep 20, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
