HAT2198R
Silicon N Channel Power MOS FET
Power Switching
REJ03G0062-0200
Rev.2.00
Oct.18.2004
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 7.2 m
Ω
typ. (at V
GS
= 10 V)
Outline
SOP-8
5 6 7 8
D D D D
65
4
G
8
7
3
1 2
S S S
1 2 3
4
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Note 2
Ratings
30
±20
14
112
14
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Avalanche current
I
AP
14
Note 2
Avalanche energy
E
AR
19.6
Channel dissipation
Pch
Note3
2.5
Note3
Channel to ambient thermal impedance
θch-a
50
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Rev.2.00, Oct.18.2004, page 1 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
