HAT2020R
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
50
20
10
Tc = –25°C
0.06
I
D
= 0.5 A, 1 A, 2 A
0.04
V
GS
= 4 V
25°C
5
75°C
2
1
0.5
0.2
0.02
10 V
0
–40
0
40
0.5 A, 1 A, 2 A
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10
20
80
120
160
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
Crss
100
30
10
Ciss
Coss
V
GS
= 0
f = 1 MHz
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
500
100
50
20
10
5
0.2
di / dt = 20 A /
µs
V
GS
= 0, Ta = 25°C
0.5
1
2
5
10
20
Capacitance C (pF)
200
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 8 A
16
V
DD
= 5 V
10 V
25 V
V
DS
V
GS
20
8
Switching Characteristics
V
GS
(V)
20
1000
500
tr
tf
td(off)
50
40
Switching Time t (ns)
Drain to Source Voltage
30
12
Gate to Source Voltage
200
100
50
td(on)
10
0
0
8
V
DD
= 25 V
10 V
5V
16
24
32
40
4
20
10
0.2
0
V
GS
= 4 V, V
DD
= 10 V
PW = 3
µs,
duty
≤
1 %
0.5
1
2
5
10
20
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.12.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
