HAT1024R
Main Characteristics
Power vs. Temperature Derating
4.0
Maximum Safe Operation Area
–100
–30
10
µs
Pch (W)
I
D
(A)
Test Condition:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm), PW
≤
10 s
3.0
–10
–3
–1
–0.3
–0.1
Channel Dissipation
2.0
1
Dr
ive
1.0
Op
er
Drain Current
PW
=
Op
10
era
ms
tio
n(
PW
No
Operation in
≤
1
te 5
this area is
0s
)
limited by R
DS (on)
DC
µ
1m
s
s
10
0
2
ive
Dr
ion
at
er
Op
at
ion
0
0
50
100
150
200
Ta = 25°C
–0.03 1 shot pulse
1 Drive Operation
–0.01
–1
–3
–0.1 –0.3
–10
–30
–100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 5:
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
Typical Output Characteristics
–20
–10 V
–8 V
–6 V
–20
Typical Transfer Characteristics
Tc = –25°C
I
D
(A)
I
D
(A)
–16
Pulse Test
–5 V
75°C
–16
25°C
–12
Drain Current
–8
–4 V
–3.5 V
Drain Current
–4.5 V
–12
–8
–4
–3 V
V
GS
= –2.5 V
–4
V
DS
= –10 V
Pulse Test
0
0
–2
–4
–6
–8
–10
0
0
–2
–4
–6
–8
–10
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
V
DS (on)
(V)
–0.5
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
V
GS
= –4 V
0.2
0.1
0.05
–10 V
–0.4
I
D
= –2 A
–0.3
–0.2
–1 A
–0.1
–0.5 A
0
0
–2
–4
–6
–8
–10
0.02
–0.2
–0.5
–1
–2
–5
–10
–20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.9.00 Sep 07, 2005 page 3 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
