FS70UM-2
High-Speed Switching Use
Nch Power MOS FET
REJ03G1434-0200
(Previous: MEJ02G0108-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 10 V
V
DSS
: 100 V
r
DS(ON) (max)
: 20 mΩ
I
D
: 70 A
Integrated Fast Recovery Diode (TYP.) : 120 ns
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
1
1.
2.
3.
4.
Gate
Drain
Source
Drain
1
2
3
3
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
—
Ratings
100
±20
70
280
70
70
280
125
– 55 to +150
– 55 to +150
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 100
µH
Typical value
Rev.2.00
Aug 07, 2006
page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
