MITSUBISHI Nch POWER MOSFET
FL10KM-12A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
SOURCE CURRENT I
S
(A)
V
GS
= 0V
Pulse Test
T
C
= 125°C
75°C
25°C
20
T
C
h = 25°C
I
D
= 10A
16
32
12
V
DS
= 100V
200V
400V
24
8
16
4
8
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
V
GS
= 10V
7 I
D
= 5A
5 Pulse Test
3
2
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
V
DS
= 10V
I
D
= 1mA
4.0
3.0
10
0
7
5
3
2
2.0
1.0
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch – c)
(°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
5
3
2
7
5
D = 1.0
0.5
1.2
10
0
0.2
0.1
P
DM
tw
1.0
0.8
3 0.05
2
10
–1
7
5
3
2
0.02
0.01
Single Pulse
T
D
=
tw
T
0.6
0.4
–50
0
50
100
150
10
–2 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
PULSE WIDTH t
w
(s)
Sep. 2001
CHANNEL TEMPERATURE Tch (°C)
RENESAS [ RENESAS TECHNOLOGY CORP ]
