CY25CAH-8F
Application Example
V
CM
Trigger Transformer
Xe Tube
C
M
+
–
8
7
6
5
V
GG
Control Signal
RD3CYD08
(IGBT Drive IC)
1
2
3
4
V
CM
I
CP
C
M
V
GE
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
130 A
300
µF
2.85 V
150 A
400
µF
2.5 V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 400 V/
µs.
In general, when R
G (off)
= 68
Ω,
it is satisfied.
3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a
large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large
currents since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (I
Xe
≤
150 A :
full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over
3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 4 V.
Rev.2.00,
May 24,2005,
page 3 of 4
RENESAS [ RENESAS TECHNOLOGY CORP ]
