MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT75AM-12
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) CES
I
GES
I
CES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
d (on)
t
r
t
d (off)
t
f
R
th (j-c)
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Thermal resistance
(Tj = 25°C)
Test conditions
I
C
= 1mA, V
GE
= 0V
V
GE
=
±30V,
V
CE
= 0V
V
CE
= 600V, V
GE
= 0V
I
C
= 7.5mA, V
CE
= 10V
I
C
= 75A, V
GE
= 15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Limits
Min.
600
—
—
4.5
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
6.0
2.5
3100
400
130
40
265
175
245
—
Max.
—
±0.5
1
7.5
3.0
—
—
—
—
—
—
—
0.42
Unit
V
µA
mA
V
V
pF
pF
pF
ns
ns
ns
ns
°C/W
V
CC
= 300V, Resistance load,
I
C
= 75A, V
GE
= 15V, R
GE
= 10Ω
Junction to case
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
100
COLLECTOR CURRENT I
C
(A)
V
GE
= 20V
OUTPUT CHARACTERISTICS
(TYPICAL)
15V
T
j
= 25°C
12V
P
C
= 300W
10
T
j
= 25°C
80
8
60
11V
6
40
10V
4
150A
75A
20
9V
2
30A
0
0
2
4
6
8
10
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
Feb.1999
RENESAS [ RENESAS TECHNOLOGY CORP ]
