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CR04AM-12-A6 参数 Datasheet PDF下载

CR04AM-12-A6图片预览
型号: CR04AM-12-A6
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管的低功耗应用 [Thyristor Low Power Use]
分类和应用: 栅极触发装置可控硅整流器
文件页数/大小: 8 页 / 107 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号CR04AM-12-A6的Datasheet PDF文件第1页浏览型号CR04AM-12-A6的Datasheet PDF文件第2页浏览型号CR04AM-12-A6的Datasheet PDF文件第3页浏览型号CR04AM-12-A6的Datasheet PDF文件第4页浏览型号CR04AM-12-A6的Datasheet PDF文件第6页浏览型号CR04AM-12-A6的Datasheet PDF文件第7页浏览型号CR04AM-12-A6的Datasheet PDF文件第8页  
CR04AM-12
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Gate to Cathode Resistance
120
100
80
60
40
20
×
100 (%)
160
140
120
100
80
60
40
20
Typical Example
×
100 (%)
Typical Example
R
GK
= 1kΩ
0
–40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage (R
GK
= rkΩ)
Breakover Voltage (R
GK
= 1kΩ)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Tj = 125°C
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
×
100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
Holding Current vs.
Junction Temperature
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
Typical Example
Tj = 125°C
R
GK
= 1kΩ
Distribution
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
Holding Current (mA)
Typical Example
I
GT
(25°C) = 35µA
R
GK
= 1kΩ
10
–2
–60 –40 –20 0 20 40 60 80 100 120 140
Rate of Rise of Off-State Voltage (V/µs)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Holding Current vs.
Gate Trigger Current
4.0
×
100 (%)
500
Holding Current (mA)
400
Typical Example
I
GT
(25°C) I
H
(1kΩ)
0.9mA
# 1 25µA
Tj = 25°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Holding Current (R
GK
= rkΩ)
Holding Current (R
GK
= 1kΩ)
300
200
#1
100
Tj = 25°C
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
0
10
0
2
3
5 7
10
1
2
3
5 7
10
2
Gate to Cathode Resistance (kΩ)
Gate Trigger Current (µA)
Rev.2.00,
Mar.01.2005,
page 5 of 7