2SK3157
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
250
Pulse Test
200
100
30
10
75°C
3
1
0.3
0.1
0.1 0.2
0.5 1
2
5
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
Tc = –25°C
150
I
D
= 20 A
100
V
GS
= 4 V
5, 10 A
25°C
5, 10 A
20 A
50
10 V
0
–40
0
40
V
DS
= 10 V
Pulse Test
10 20
50 100
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
10000
3000
Reverse Recovery Time trr (ns)
500
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
Capacitance C (pF)
Ciss
1000
300
100
30
10
Coss
Crss
200
100
50
20
10
0.1
V
GS
= 0
f = 1 MHz
0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 20 A
V
DD
= 100 V
50 V
25 V
V
GS
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
5000
2000
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
td(off)
tf
tr
td(on)
200
160
16
Switching Time t (ns)
1000
500
200
100
50
20
10
0.1 0.2
0.5
1
120
V
DS
12
80
8
40
V
DD
= 100 V
50 V
25 V
4
0
200
0
40
80
120
160
2
5 10 20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
