2SK3151
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
50
Pulse Test
40
10,20 A
30
I
D
= 50 A
50 A
20
4V
10, 20 A
10
0
–50
V
GS
= 10 V
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
75°C
Tc = –25°C
25°C
V
DS
= 10 V
Pulse Test
0
50
100
150
200
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
30000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
10000
Ciss
3000
1000
200
100
50
20
10
0.1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Coss
Crss
300
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 50 A
V
DD
= 100 V
50 V
25 V
V
DS
V
GS
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
5000
td(off)
tf
tr
200
160
16
Switching Time t (ns)
1000
500
200
100
50
20
10
0.1 0.2
120
12
80
8
40
V
DD
= 100 V
50 V
25 V
4
0
400
td(on)
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
0
80
160
240
320
0.5 1
2
5 10 20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
