2SK3136
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
Note
1
I
DR
I
AP
Note
3
E
AR
Note
3
Pch
Note
2
Tch
Tstg
Ratings
40
±20
75
300
75
50
333
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
40
—
—
1.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.5
6.5
80
6800
1300
380
130
25
30
60
300
550
400
1.05
90
Max
—
±0.1
10
2.5
5.8
10
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 40 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note
4
I
D
= 40 A, V
GS
= 10 V
Note
4
I
D
= 40 A, V
GS
= 4 V
Note
4
I
D
= 40 A, V
DS
= 10 V
Note
4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 75 A
V
GS
= 10 V, I
D
= 40 A,
R
L
= 0.75
Ω
I
F
= 75 A, V
GS
= 0
I
F
= 75 A, V
GS
= 0
di
F
/ dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
