2SK3000
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Drain to source voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
DS(SUS)
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Min
40
40
±10
—
—
1.1
0.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
1.2
0.24
0.16
14.0
68
3.0
0.12
0.6
1.7
1.4
Max
60
—
—
1.0
±5
2.1
—
0.5
0.3
—
—
—
—
—
—
—
Unit
V
V
V
µA
µA
V
S
Ω
Ω
pF
pF
pF
µs
µs
µs
µs
Test Conditions
I
D
= 100
µA,
V
GS
= 0
L = 100
µH,
I
D
= 3 A
I
G
= ±100
µA,
V
DS
= 0
V
DS
= 40 V, V
GS
= 0
V
GS
= ±6.5V, V
DS
= 0
I
D
= 10
µA,
V
DS
= 5 V
I
D
= 450 mA, V
DS
= 10 V
Note3
I
D
= 450 mA, V
GS
= 4V
Note3
I
D
= 450 mA, V
GS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
GS
= 4 V, I
D
= 450 mA
R
L
= 22
Ω
Rev.3.00, Jun.16.2004, page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
