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2SK2930 参数 Datasheet PDF下载

2SK2930图片预览
型号: 2SK2930
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关局域网
文件页数/大小: 8 页 / 87 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK2930
Main Characteristics
Power vs. Temperature Derating
80
200
100
Maximum Safe Operation Area
10
0
10
PW
D
C
O
Channel Dissipation Pch (W)
µ
s
Drain Current I
D
(A)
60
50
20
10
5
2
1
0.5
Ta = 25°C
1
=
10
m
s
µ
s
s
m
(1
t
ra
pe
40
sh
ot
n
io
c
(T
=
)
20
Operation in
this area is
limited by R
DS(on)
°
C
25
)
0
50
100
150
200
0.2
0.1
0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
6V
5V
4.5 V
50
Pulse Test
4V
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
30
3.5 V
Drain Current I
D
(A)
40
40
30
Tc = 75°C
25°C
20
–25°C
20
10
V
GS
= 3 V
10
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
1.0
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Pulse Test
0.2
0.8
0.6
I
D
= 20 A
10 A
0.2
5A
0
4
8
12
16
20
0.1
0.4
0.05
V
GS
= 4 V
10 V
0.02
0.01
0.1
0.3
1
3
10
30
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.5.00 Sep.07, 2005 page 3 of 7