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2SK2932 参数 Datasheet PDF下载

2SK2932图片预览
型号: 2SK2932
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关局域网
文件页数/大小: 8 页 / 87 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK2932
Main Characteristics
Power vs. Temperature Derating
40
1000
300
30
Operation in
this area is
limited by R
DS(on)
PW
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
100
30
10
3
1
0.3
10
10
0
1
µ
s
m
=
10
s
m
s(
µ
s
20
DC
Op
er
at
10
ion
1s
(T
ho
c=
t)
25
°
C
)
0
50
100
150
200
0.1
0.1
Ta = 25°C
0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10 V 6 V
20
Pulse Test
5V
20
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
16
16
Tc = –25°C
12
25°C
12
4V
75°C
8
8
4
3V
V
GS
= 2.5 V
4
V
DS
= 10 V
Pulse Test
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
V
GS
= 4 V
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.0
Pulse Test
1.6
1.2
0.8
I
D
= 10 A
0.4
5A
2A
4
8
12
16
20
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
10 V
0.02
0.01
1
2
5
10
20
50
100
0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 3 of 7