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2SK2934 参数 Datasheet PDF下载

2SK2934图片预览
型号: 2SK2934
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管电源开关局域网
文件页数/大小: 8 页 / 87 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK2934
Main Characteristics
Power vs. Temperature Derating
40
200
100
30
10
µ
s
0
µ
s
1
m
s
10
tio
n
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
50
20
PW
10
10
5
2
1
0.5
D
C
20
O
pe
10
Operation in
this area is
limited by R
DS(on)
=
ra
m
(T
s
(1
o
sh
25
°
C
=
c
t)
)
0
50
100
150
200
Ta = 25°C
0.2
0.1 0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
20
6V
5V
Typical Transfer Characteristics
Drain Current I
D
(A)
30
4.5 V
4V
Drain Current I
D
(A)
40
Pulse Test
16
V
DS
= 10 V
Pulse Test
12
20
3.5 V
10
V
GS
= 3 V
8
Tc = 75°C
25°C
–25°C
4
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
1.0
Pulse Test
0.8
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Pulse Test
0.2
0.6
I
D
= 15 A
10 A
0.2
5A
0.1
0.4
0.05
V
GS
= 4 V
10 V
0.02
0.01
0
4
8
12
16
20
0.1 0.2
0.5
1
2
5
10 20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 3 of 7