2SK2959
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
30
±20
50
200
50
75
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
±20
—
—
1.0
—
—
25
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
7.0
12
45
2000
1500
350
20
330
190
190
0.95
60
Max
—
—
10
±10
2.0
10
18
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10m A, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
GS
=
±16
V, V
DS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A, V
GS
= 10 V
Note3
I
D
= 25 A, V
GS
= 4 V
Note3
I
D
= 25 A, V
DS
= 10 V
Note3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
GS
= 10 V, I
D
= 25 A,
R
L
= 0.4
Ω
I
F
= 50A, V
GS
= 0
I
F
= 50A, V
GS
= 0
di
F
/ dt = 50 A/
µs
Rev.5.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
