2SK2980
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Symbol
V
DSS
V
GSS
Ratings
30
+12
–10
1.0
4
0.8
150
–55 to +150
Unit
V
V
V
A
A
W
°
C
°
C
Drain current
I
D
Drain peak current
I
D(pulse)Note1
Channel dissipation
Pch
Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Min
30
+12
–10
—
—
0.5
—
—
1.2
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
0.2
0.3
2.0
155
75
35
12
30
35
30
Max
—
—
—
1.0
±5.0
1.5
0.28
0.5
—
—
—
—
—
—
—
—
Unit
V
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
Test Conditions
I
D
= 100
µA,
V
GS
= 0
I
G
= +100
µA,
V
DS
= 0
I
G
= –100
µA,
V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
GS
=
±8
V, V
DS
= 0
I
D
= 10
µA,
V
DS
= 5 V
I
D
= 500 mA, V
GS
= 4 V
Note3
I
D
= 500 mA, V
GS
= 2.5 V
Note3
I
D
= 500 mA, V
DS
= 10 V
Note3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
GS
= 4 V, I
D
= 500 mA,
R
L
= 20
Ω
Rev.4.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
