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2SK2800 参数 Datasheet PDF下载

2SK2800图片预览
型号: 2SK2800
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管电源开关
文件页数/大小: 8 页 / 88 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK2800
Main Characteristics
Power vs. Temperature Derating
100
1000
300
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
75
100
30
10
3
1
0.3
DC
PW
Op
=
10
on
µ
s
0
µ
1m
s
s
10
ms
(1
sh
ot)
50
er
ati
25
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
0.3
1
3
(T
c
=
25
°
C
)
0
50
100
150
200
0.1
0.1
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
6V
4.5 V
50
4V
Pulse Test
30
3.5 V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
40
40
30
Tc = 75°C
25°C
20
–25°C
10
10
V
GS
= 3 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V
GS
= 4 V
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.0
Pulse Test
1.6
1.2
I
D
= 50 A
0.8
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.02
0.01
0.005
1
2
5
10
20
50
100
10 V
0.4
20 A
10 A
4
8
12
16
20
0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.9.00 Sep 07, 2005 page 3 of 7