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2SK2737 参数 Datasheet PDF下载

2SK2737图片预览
型号: 2SK2737
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 开关电源开关
文件页数/大小: 7 页 / 88 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK2737
Main Characteristics
Power vs. Temperature Derating
40
Maximum Safe Operation Area
500
200
10
PW
Channel Dissipation Pch (W)
10
0
µ
s
Drain Current I
D
(A)
µ
s
30
100
50
20
10
5
2
D
C
1
m
s
10
=
O
20
pe
m
s
)
ot
sh
(1
tio
ra
10
n
Operation in
(T
c
this area is
=
25
limited by R
DS(on)
°
C
)
0
50
100
150
200
1
Ta = 25°C
0.5
0.1 0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10 V 8 V
100
6V
5V
Pulse Test
4.5 V
4V
100
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
80
80
Tc = –25°C
25°C
75°C
60
60
40
3.5 V
3V
V
GS
= 2.5 V
40
20
20
V
DS
= 10 V
Pulse Test
2
4
6
8
10
0
2
4
6
8
10
0
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
100
Pulse Test
Drain to Source Saturation Voltage
V
DS (on)
(V)
1.0
Pulse Test
0.8
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
50
0.6
I
D
= 50 A
0.4
20 A
10 A
20
V
GS
= 4 V
0.2
10
10 V
5
1
2
5
10
20
50
100
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 3 of 6