2SK2586
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.04
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
75°C
25°C
Tc = –25°C
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Pulse Test
0.032
0.024
I
D
= 50 A
10, 20 A
V
GS
= 4 V
10, 20, 50 A
10 V
0.016
0.008
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time t rr (ns)
5000
2000
10000
5000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
1000
500
200
100
50
20
10
5
0.1
Ciss
2000
1000
500
Crss
200
100
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Coss
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 50 A
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
5000
2000
100
80
16
Switching Time t (ns)
1000
500
200
100
50
20
10
5
0.1
0.3
60
V
DS
V
DD
= 10 V
25 V
50 V
V
GS
td(off)
tf
tr
td(on)
12
40
8
20
V
DD
= 50 V
25 V
10 V
0
40
80
120
160
4
0
200
V
GS
= 10 V, V
DD
= 30 V
PW = 5
µs,
duty < 1 %
1
3
10
30
100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.5.00 Sep 07, 2005 page 4 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
