2SK2570
Static Drain to Source on State
Resistance vs. Temperature
2.5
I
D
= 0.2 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
1
0.5
0.2
0.1
0.05
2.0
Tc = –25°C
1.5
V
GS
= 2.5 V
0.05, 0.1A
25°C
75°C
1.0
0.05, 0.1, 0.2 A
0.5
0
Ð40
4V
Pulse Test
0
40
80
120
160
0.02
0.01
0.005
V
DS
= 10 V
Pulse Test
0.002
0.005 0.01 0.02
0.05
0.1
0.2
Case Temperature T
C
(°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
500
200
500
Switching Characteristics
td(off)
Switching Time t (µs)
Capacitance C (pF)
200
100
50
20
10
5
0.05
100
50
20
10
5
2
1
0
V
GS
= 0
f = 1 MHz
tf
tr
Ciss
Coss
td(on)
Crss
V
GS
= 5 V,
V
DD
= 10 V
PW = 5
µs,
duty < 1 %
4
8
12
16
20
0.1
0.2
0.5
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
0.20
Drain Current
I
D
(A)
Reverse Drain Current I
DR
(A)
0.16
0.12
5V
V
GS
= 0
0.08
0.04
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
