2SK2569
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW
≤
10
µs,
duty cycle
≤
1 %
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
Pch*
2
Tch
Tstg
Ratings
50
±20
0.2
0.4
150
150
–55 to +150
Unit
V
V
A
A
mW
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note: 2. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)1
R
DS(on)2
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Min
50
±20
—
—
0.5
—
—
0.13
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.0
3.1
0.23
14.0
17.2
1.73
40
86
1120
430
Max
—
—
1.0
±2.0
1.5
2.6
5.0
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
Test Conditions
I
D
= 100
µA,
V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
DS
= 40 V, V
GS
= 0
V
GS
=
±16
V, V
DS
= 0
I
D
= 10
µA,
V
DS
= 5 V
I
D
= 100 mA, V
GS
= 4 V*
2
I
D
= 40 mA, V
GS
= 2.5 V*
2
I
D
= 100 mA, V
DS
= 10 V
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
GS
= 10 V, I
D
= 100 mA,
R
L
= 300
Ω
Rev.3.00 Dec 27, 2006 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
