2SK2596
Drain to Source Saturation Voltage
vs. Drain Current
Drain to Source Saturation Voltage
V
DS(sat)
(V)
Gate to Source Cutoff Voltage vs.
Ambient Temperature
1.2
Gate to Source Cutoff Voltage
V
GS(off)
(V)
10
5
2
1
0.5
0.2
0.1
V
DS
= 12 V
Pulse Test
0.05
0.1
0.2
0.5
1
75°C
Tc = -25°C
25°C
1.0
0.8
0.6
0.4
0.2
V
DS
= 12 V
0
-25
0
25
50
75
100
125
10 mA
1 mA
I
D
=
0.1 m
A
0.05
0.02
0.01
0.01 0.02
Drain Current I
D
(A)
Input Capacitance vs.
Gate to Source Voltage
24
Output Capacitance Coss (pF)
Input Capacitance Ciss (pF)
Ambient Temperature Ta (°C)
Output Capacitance vs.
Drain to Source Voltage
100
50
20
10
5
V
GS
= 0
f = 1 MHz
20
22
20
18
16
14
-10
V
DS
= 0
f = 1 MHz
-6
-2
2
6
10
Gate to Source Voltage V
GS
(V)
2
1
0.5 1
2
5 10
0.1 0.2
Drain to Source V
DS
(V)
Reverse Transfer Capacitance Crss (pF)
Reverse Transfer Capacitance vs.
Gate to Source Voltage
100
50
Output Power Po (W)
Output Power, Drain Efficiency
vs. Input Power
2.5
V
DS
= 12 V
I
DO
= 100 mA
2.0 f = 836.5 MHz
1.5
Po
η
D
1.0
40
100
(%)
Drain Efficiency
η
D
80
20
10
5
V
GS
= 0
f = 1 MHz
0.5
1
2
5
10
20
60
2
0.5
20
0
1
0.1 0.2
0
20
40
60
80
100
Gate to Source Voltage V
GS
(V)
Input power Pin (W)
Rev.3.00, Feb.14.2005, page 3 of 4
RENESAS [ RENESAS TECHNOLOGY CORP ]
