2SK2315
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. When using the alumina ceramic board (12.5
×
20
×
0.7mm)
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
60
±20
2
4
2
1
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
on
t
off
Min
60
±20
—
—
0.5
—
—
1.5
—
—
—
—
—
Typ
—
—
—
—
—
0.4
0.35
1.8
173
85
23
21
85
Max
—
—
±5
5
1.5
0.6
0.45
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 0.3 A, V
GS
= 3 V*
3
I
D
= 1 A, V
GS
= 4 V*
3
I
D
= 1 A, V
DS
= 10 V*
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 1 A, R
L
= 30
Ω,
V
GS
= 10 V
Rev.2.00 Sep. 07, 2005 page 2 of 5
RENESAS [ RENESAS TECHNOLOGY CORP ]
