欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SK2007 参数 Datasheet PDF下载

2SK2007图片预览
型号: 2SK2007
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 局域网
文件页数/大小: 7 页 / 82 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK2007的Datasheet PDF文件第1页浏览型号2SK2007的Datasheet PDF文件第2页浏览型号2SK2007的Datasheet PDF文件第4页浏览型号2SK2007的Datasheet PDF文件第5页浏览型号2SK2007的Datasheet PDF文件第6页浏览型号2SK2007的Datasheet PDF文件第7页  
2SK2007
Main Characteristics
Power vs. Temperature Derating
150
100
30
1
Maximum Safe Operation Area
10
0
10
Channel Dissipation Pch (W)
µ
µ
s
s
Drain Current I
D
(A)
PW
m
s
100
10
3
1
0.3
=
O
pe
ra
tio
n
(T
Operation in this
c
=
area is limited
25
°
C
by R
DS(on)
)
D
C
10
m
s
(1
ot
sh
)
50
Ta = 25°C
0.1
0
50
100
150
1
3
10
30
100 300 1000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
40
30
20
10
V
GS
= 4 V
Typical Transfer Characteristics
50
10 V
8V
Pulse Test
V
DS
= 10 V
Drain Current I
D
(A)
Drain Current I
D
(A)
6V
40
30
20
10
Pulse Test
5.5 V
5V
–25°C
Tc = 25°C
75°C
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
5
4
3
2
1
20 A
10 A
I
D
= 5 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
2
1
0.5
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
0.1
15 V
0.05
1
2
5
10
20
50
100
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6