2SK1764
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
I
D
= 2 A
1A
0.5 A
V
GS
= 4 V
Forward Transfer Admittance
y
fs
(S)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
5
2
1.0
0.5
V
DS
= 10 V
–25
°
C
Pulse Test T = 25°C
C
1.0
0.8
0.6
75
°
C
0.4
V
GS
= 10 V
2 A 0.5 A
1A
0.2
0.1
0.05
0.05
0.2
0
–40
0
40
80
120
160
0.1
0.2
0.5
1.0
2
5
Case Temperature T
C
(°C)
Drain Current I
D
(A)
Body to Drain Diode Reverse
Recovery Time
1000
1000
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
100
30
Crss
10
3
1
Coss
Reverse Recovery Time trr (ns)
500
300
200
100
50
20
10
0.05
0.1
0.2
0.5
1.0
2
5
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
100
80
V
DD
= 50 V
25 V
10 V
60
V
DS
V
DD
= 50 V
V
GS
12
20
100
Switching Characteristics
Gate to Source Voltage V
GS
(V)
td (off)
50
Switching Time t (ns)
16
20
10
5
tf
V
GS
= 10 V V
DD
= 30 V
PW = 2
µs,
duty < 1 %
•
•
tr
40
20
8
4
td (on)
2
1
0.05
25 V
10 V
0
2
4
6
I
D
= 1.5 A
8
0
10
0.1
0.2
0.5
1.0
2
5
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
