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2SK1697 参数 Datasheet PDF下载

2SK1697图片预览
型号: 2SK1697
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N-Channel MOS FET]
分类和应用: 晶体小信号场效应晶体管开关
文件页数/大小: 7 页 / 88 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1697
Silicon N-Channel MOS FET
REJ03G1373-0200
(Previous: ADE-208-1313)
Rev.2.00
May 11, 2006
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source.
Suitable for DC – DC converter, motor drive, power switch, solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK
R
)
3
2 1
G
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
Note:
Marking is “EY”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Drain current
I
D
Drain peak current
I
D(pulse)*1
Body to drain diode reverse drain current
I
DR
Channel dissipation
Pch
*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
10
µs,
duty cycle
1%
2. When using the alumina ceramic board (12.5
×
20
×
0.7 mm)
Ratings
60
±20
0.5
1.5
0.5
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00 May 11, 2006 page 1 of 6