2SK1697
Silicon N-Channel MOS FET
REJ03G1373-0200
(Previous: ADE-208-1313)
Rev.2.00
May 11, 2006
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source.
Suitable for DC – DC converter, motor drive, power switch, solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK
R
)
3
2 1
G
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
Note:
Marking is “EY”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Drain current
I
D
Drain peak current
I
D(pulse)*1
Body to drain diode reverse drain current
I
DR
Channel dissipation
Pch
*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the alumina ceramic board (12.5
×
20
×
0.7 mm)
Ratings
60
±20
0.5
1.5
0.5
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00 May 11, 2006 page 1 of 6