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2SK1667 参数 Datasheet PDF下载

2SK1667图片预览
型号: 2SK1667
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 81 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1667
Main Characteristics
Power vs. Temperature Derating
80
100
Operation in this area
is limited by R
DS(on)
10
0
Maximum Safe Operation Area
Pch (W)
I
D
(A)
30
10
3
1
0.3
0.1
10
µ
s
60
µ
s
Channel Dissipation
1
D
C
PW
40
Drain Current
m
s
O
=
pe
ra
t
10
m
io
s
n
20
(T
(1
c
=
sh
ot
25
)
Ta = 25°C
1
3
10
30
°
C
)
0
50
100
150
200
100 300
1000
Case Temperature
Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
5.5 V
Pulse Test
5V
6
6V
10
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
6
V
DS
= 10 V
Pulse Test
4
4.5 V
4
Tc = 75°C
2
25°C
– 25°C
2
V
GS
= 4 V
0
1
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
V
GS
= 10 V
Drain to Source Saturation Voltage V
DS(on)
(V)
Static Drain to Source On State Resistance
R
DS (on)
(Ω)
2
1
0.5
6
I
D
= 10 A
4
5A
2A
0
4
8
12
16
20
15 V
0.2
0.1
0.05
0.2
0.5
1
2
5
10
20
2
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6