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2SK1516 参数 Datasheet PDF下载

2SK1516图片预览
型号: 2SK1516
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 84 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1515, 2SK1516
Main Characteristics
Power vs. Temperature Derating
120
Maximum Safe Operation Area
50
10
ar
Channel Dissipation Pch (W)
20
ea
10
O
is per
lim at
ite ion
d in
by th
R is
Drain Current I
D
(A)
(o
10
5
2
1
0.5
0.2
0.1
0.05
PW
µ
s
0
n)
=
µ
s
DS
80
10
1
C
D
ra
pe
O
m
s
(1
sh
ot
pu
ls
e)
)
m
s
n
tio
(T
C
=
°
C
25
40
Ta = 25
°
C
1
3
10
2SK1515
2SK1516
30
100
300 1,000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
7V
6V
20
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
16
Pulse Test
16
–25°C
Ta = 25°C
12
5V
12
75°C
8
8
4
V
GS
= 4 V
0
10
20
30
40
50
4
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
0.2
0.1
0.05
0.5
15 V
V
GS
= 10 V
Drain to Source Saturation Voltage V
DS (on)
(V)
4
5A
2
I
D
= 2 A
0
4
8
12
16
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
20
1
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6