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2SK1518 参数 Datasheet PDF下载

2SK1518图片预览
型号: 2SK1518
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 局域网
文件页数/大小: 7 页 / 84 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1517, 2SK1518
Main Characteristics
Power vs. Temperature Derating
150
100
sa
re
a
O
is per
lim a t
ite ion
d in
by th
R i
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
30
10
3
1
0.3
100
D
C
50
PW
µ
s
1
m
=
O
s
pe 10
m
ra
tio s (
1
n
(T Sh
ot
C
=
25 )
°
C
)
2SK1518
2SK1517
30
100
300
1,000
10
10
0
DS
(o
n)
µ
s
Ta = 25°C
0.1
0
50
100
150
1
3
10
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
7V
6V
20
Typical Transfer Characteristics
Drain Current I
D
(A)
Pulse Test
30
Drain Current I
D
(A)
40
16
V
DS
= 20 V
Pulse Test
12
20
5V
8
75
°
C
25
°
C
T
C
= – 25
°
C
10
V
GS
= 4 V
0
10
20
30
40
50
4
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Drain to Source Saturation Voltage V
DS (on)
(V)
8
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2
1
0.5
Pulse Test
6
20 A
4
10 A
2
I
D
= 5 A
V
GS
= 10 V
15 V
0.2
0.1
0.05
1
2
5
10
20
0
4
8
12
16
20
50
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6