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2SK1527 参数 Datasheet PDF下载

2SK1527图片预览
型号: 2SK1527
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管局域网
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1526, 2SK1527
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
yfs
(S)
0.5
V
GS
= 10 V
Pulse Test
I
D
= 50 A
20 A
100
50
V
DS
= 10 V
Pulse Test
T
C
= –25°C
25°C
75°C
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
0.4
0.3
20
10
5
0.2
10 A
0.1
2
1
0.5
0
–40
0
40
80
120
160
1
2
5
10
20
50
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5,000
10,000
di/dt = 100 A/µs, V
GS
= 0
Pulse Test
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Reverse Recovery Time t rr (ns)
Capacitance C (pF)
2,000
1,000
500
1,000
Coss
200
100
50
1
2
5
10
20
50
100
100
Crss
V
GS
= 0
f = 1 MHz
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
1,000
800
V
DD
= 100 V
250 V
400 V
V
GS
V
DS
20
1,000
Switching Characteristics
Gate to Source Voltage V
GS
(V)
500
t
d (off)
I
D
= 30 A
Switching Time t (ns)
16
200
100
50
t
r
600
12
t
f
t
d (on)
400
8
V
DD
= 400 V
250 V
100 V
80
160
240
320
400
200
4
20
10
0.5
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
1 %
1
2
5
10
20
50
0
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6