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2SK1520 参数 Datasheet PDF下载

2SK1520图片预览
型号: 2SK1520
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1519, 2SK1520
Main Characteristics
Power vs. Temperature Derating
300
Maximum Safe Operation Area
1,000
300
rea
s a
n)
10
thi
o
in R
DS (
10
µ
s
0
µ
ion y
PW
rat ted b
s
e i
1
m
=
Op lim
DC
10
s
is
Op
ms
er
(1
ati
Sh
on
ot)
(T
C
=
25
°
C
)
Channel Dissipation Pch (W)
Drain Current I
D
(A)
100
30
10
3
1
0.3
0.1
200
100
Ta = 25
°
C
1
3
10
30
2SK1519
2SK1520
100
300
1,000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
6V
10 V
5V
Pulse Test
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
40
40
30
4.5 V
20
30
20
T
C
= 75°C
25°C
–25°C
10
V
GS
= 4 V
10
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
I
D
= 50 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
Drain to Source Saturation Voltage V
DS (on)
(V)
6
4
20 A
2
10 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
0.1
0.05
2
5
10
20
50
100
200
V
GS
= 10 V, 15 V
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 Apr 27, 2006 page 3 of 6